TY  - BOOK
T1  - Gas source molecular beam epitaxy growth and properties of phosphorus containing III-V heterostructures
T2  - Springer series in materials sciences
A1  - Panish, M. B.
A2  - Temkin, H.
LA  - English
PP  - Berlin
PB  - Springer-Verlag
YR  - 1993
UL  - https://tuklas.up.edu.ph/Record/UP-99796217602985360
OP  - 428
CN  - QC 611.6 M64 P36 1993
SN  - 354056540X
KW  - Molecular beam epitaxy.
KW  - Gallium arsenide semiconductors.
ER  -