Influence of stacked Ge Islands on the dark current-voltage characteristics of a diode for solar cell application
We report on the dark current-voltage (I-V) characteristics of a diode with embedded stacked Ge islands in the intrinsic layer for solar cell application. Gas-source molecular beam epitaxy was used to grow the stacked Ge islands on Si substrate. Two-diode model was utilized to analyze the dark I-V c...
| 发表在: | Transactions of the National Academy of Science and Technology Vol. 33, no. 1 (Jul. 2011), 180 |
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| 主要作者: | |
| 其他作者: | , , |
| 格式: | 文件 |
| 语言: | English |
| 出版: |
2011
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| 主题: |