Showing 1 - 1 results of 1 for search 'Tsung-Hsing Yu', זמן שאילתה: 0.01s
Refine Results
-
1
Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model. מאת Tsung-Hsing Yu
הוצא לאור ב IEEE Transactions on electron devicesסימן המיקום: loading...
ממוקם: loading...Article loading...