1 - 1 toradh á dtaispeáint as 1 toradh san iomlán ar an gcuardach 'Sghaier, N.', am iarratais: 0.01s Beachtaigh na torthaí
  1. 1

    Study of trapping phenomenon in 4H-SiC MESFETs dependence on substrate purity. de réir Sghaier, N.

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    Study of trapping phenomenon in 4H-SiC MESFETs dependence on substrate purity.

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