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    Improvements in direct-current characteristics of Al0.45Ga0.55As-GaAs digital-graded superlattice-emitter HBTs with reduced turn-on voltage by wet oxidation. по Ming-Kwen Tsai

    Опубликовано в: IEEE Transactions on electron devices
    Статья

    Improvements in direct-current characteristics of Al0.45Ga0.55As-GaAs digital-graded superlattice-emitter HBTs with reduced turn-on voltage by wet oxidation.

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