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    Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model. द्वारा Lallement, C.

    में प्रकाशित IEEE Transactions on electron devices
    लेख

    Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model.

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