Showing 1 - 1 results of 1 for search 'Jongdae Kim', 查询时间: 0.01s Refine Results
  1. 1

    A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing. 由 Jongdae Kim

    文件

    A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing.

检索工具: