1 - 1 toradh á dtaispeáint as 1 toradh san iomlán ar an gcuardach 'Dong-Won Kim', am iarratais: 0.01s Beachtaigh na torthaí
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    Reduction of charge-transport characteristics of SiGe dot floating gate memory device with ZrO2 tunneling oxide. de réir Dong-Won Kim

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    Reduction of charge-transport characteristics of SiGe dot floating gate memory device with ZrO2 tunneling oxide.

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